DocumentCode
1503683
Title
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
Author
Ting, Shyh-Fann ; Fang, Yean-Kuen ; Chen, Chien-Hao ; Yang, Chih-Wei ; Yu, Mo-Chiun ; Jang, Syun-Ming ; Yu, Chen-Hua ; Liang, Mong-Song ; Chen, Sunway ; Shih, R.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
37
Issue
12
fYear
2001
fDate
6/7/2001 12:00:00 AM
Firstpage
788
Lastpage
790
Abstract
The study of He plus remote plasma nitridation (RPN) technology for an ultra-thin gate dielectric in the 18-22 Å range is reported. Experimental results show that He can enhance the RPN process to reduce the gate current and effective thickness of gate dielectric films, especially for thinner gate dielectric films. In addition, the He plus RPN process allows the integrity of the ultra-thin gate dielectric film to be retained even in a high-density plasma environment
Keywords
CMOS integrated circuits; integrated circuit technology; nitridation; plasma materials processing; He; He plus remote plasma nitridation; deep submicron CMOS technology; dielectric film; ultra-thin gate oxide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010515
Filename
929699
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