• DocumentCode
    1503696
  • Title

    High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor

  • Author

    Ma, Z. ; Mohammadi, S. ; Bhattacharya, P. ; Katehi, L.P.B. ; Alterovitz, S.A. ; Ponchak, G.E.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    37
  • Issue
    12
  • fYear
    2001
  • fDate
    6/7/2001 12:00:00 AM
  • Firstpage
    790
  • Lastpage
    791
  • Abstract
    A high-performance double-mesa type Si/SiGe/Si power HBT at X-band (8.4 GHz) frequency is demonstrated. Under continuous wave operation, a single 20-finger common-base Si/Si0.75Ge0.25/Si (2×10 μm2 of each emitter finger) HBT has an output power of 27.4 dBm and an associated power gain of 7 dB at peak PAE of 32.3%. These parametric values represent the state-of-the-art power performance of SiGe-based HBTs
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; silicon; wide band gap semiconductors; 32.3 percent; 7 dB; 8.4 GHz; Si-SiGe-Si; SiGe/Si heterojunction bipolar transistor; X-band; continuous wave operation; double mesa Si/SiGe/Si power HBT; output power; power added efficiency; power gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010514
  • Filename
    929700
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1503696