DocumentCode
1504146
Title
GaAlAs/GaAs active filter based on vertical cavity surface emitting laser
Author
Koyama, Fumio ; Kubota, Sho ; Iga, Kenichi
Author_Institution
Tokyo Inst. of Technol., Precision & Intelligence Lab., Yokohama, Japan
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1093
Lastpage
1095
Abstract
A novel active filter based on a vertical cavity surface emitting laser is demonstrated. A 3 dB filter bandwidth as narrow as 0.08 nm was obtained. A polarisation independent and ultralow power consumption device is expected with 2-D array configuration.
Keywords
III-V semiconductors; active filters; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; laser beam applications; laser cavity resonators; optical communication equipment; optical filters; semiconductor junction lasers; 3 dB filter bandwidth; GaAlAs-GaAs; WDM trunk lines; active filter; monolithic fabrication; polarisation independent; semiconductor lasers; surface emitting laser; ultralow power consumption; vertical cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910679
Filename
76235
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