• DocumentCode
    1504233
  • Title

    In-plane microcavity resonators with two-dimensional photonic bandgap mirrors

  • Author

    Smith, C.J.M. ; De La Rue, R.M. ; Benisty, H. ; Oesterle, U. ; Krauss, T.F. ; Labilloy, D. ; Weisbuch, C. ; Houdré, R.

  • Author_Institution
    Optoelectron. Res. Group, Glasgow Univ., UK
  • Volume
    145
  • Issue
    6
  • fYear
    1998
  • fDate
    12/1/1998 12:00:00 AM
  • Firstpage
    373
  • Lastpage
    378
  • Abstract
    Two-dimensional photonic bandgap structures are used to form one-dimensional microcavities in a GaAs/AlGaAs laser-like heterostructure. Photoluminescence from InAs quantum dots embedded in the optical waveguide is used to probe these cavities. At resonance, peak transmission values greater than 30%, are observed for modes of 8 nm half-width, associated with estimated reflectivities in excess of 90%,. The mode volume is limited by the penetration depth of the field into the PBG mirrors, which amounts to approximately one lattice spacing or 0.25 μm. This value of penetration depth approaches the ultimate limit on compactness that can be achieved with the particular photonic lattice parameters used in the experiments. The dependence of the resonance wavelength on cavity length compares satisfactorily with a theoretical supercell model
  • Keywords
    III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; indium compounds; light transmission; mirrors; photoluminescence; photonic band gap; reflectivity; semiconductor heterojunctions; semiconductor quantum dots; 0.25 mum; GaAs-AlGaAs-InAs; GaAs/AlGaAs laser-like heterostructure; InAs quantum dots; PBG mirrors; cavity length; in-plane microcavity resonators; mode volume; one-dimensional microcavities; optical waveguide; peak transmission; penetration depth; photoluminescence; photonic bandgap structures; photonic lattice parameters; reflectivities; resonance wavelength; supercell model; two-dimensional photonic bandgap mirrors;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19982465
  • Filename
    762376