DocumentCode
1504262
Title
High-resolution pressure sensors fabricated by silicon wafer direct bonding
Author
Chung, G.S. ; Kawahito, S. ; Ishida, Makoto ; Nakamura, T.
Author_Institution
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
Volume
27
Issue
12
fYear
1991
fDate
6/6/1991 12:00:00 AM
Firstpage
1098
Lastpage
1100
Abstract
Silicon diaphragm pressure sensors have been fabricated on SOI structures to reduce the pressure sensitivity variation. The SOI structure, made by direct bonding two oxidised silicon wafer together, was used as an etch-stop layer during diaphragm formation and for controlling the diaphragm thickness. The pressure sensitivity variation can be controlled to within a standard deviation of +or-2.3% from wafer to wafer.
Keywords
electric sensing devices; elemental semiconductors; pressure measurement; pressure transducers; semiconductor devices; silicon; SOI structures; Si; Si wafer direct bonding; diaphragm formation; diaphragm thickness; etch-stop layer; high-resolution type; oxidised wafers; pressure sensitivity variation; pressure sensors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910682
Filename
76238
Link To Document