DocumentCode
1504384
Title
Microwave modulation of a quantum-well laser with and without external optical injection
Author
Jin, X. ; Chuang, S.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
13
Issue
7
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
648
Lastpage
650
Abstract
We compare three microwave modulation methods experimentally and theoretically using a semiconductor quantum-well (QW) Fabry-Perot test laser: (1) direct microwave current modulation of the test laser (electrical modulation); (2) optical modulation by an external single-wavelength pump laser with a modulated optical injection power; and (3) electrical modulation of the test laser that is injection locked by an external single-wavelength pump laser with a constant injection power. This is the first direct comparison of the three modulation methods on the same QW laser, to the best of our knowledge. The bandwidth of optical absorption modulation is 7.7 GHz, which is 1.45 times the direct electrical modulation bandwidth (5.3 GHz) at a bias current of 30 mA in the test laser. On the other hand, the electrical modulation of the test laser under injection-locking condition has a significantly higher modulation bandwidth (10.5 GHz) than both the electrical and optical modulation methods.
Keywords
Fabry-Perot resonators; electro-optical modulation; laser mode locking; optical modulation; optical pumping; quantum well lasers; 10.5 GHz; 30 mA; 5.3 GHz; 7.7 GHz; bandwidth; bias current; constant injection power; direct electrical modulation bandwidth; direct microwave current modulation; electrical modulation; external optical injection; external single-wavelength pump laser; injection-locking condition; microwave modulation; modulated optical injection power; optical absorption modulation; optical modulation; quantum-well laser; semiconductor QW Fabry-Perot test laser; Bandwidth; Laser theory; Masers; Microwave theory and techniques; Optical modulation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor device testing; Semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.930402
Filename
930402
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