Noise characteristics of GaAs-AlGaAs heterojunction punch-through phototransistors

Author

Luo, Hailin ; Chan, Hoi Kwan ; Chang, Yuchun ; Wang, Y.

Author_Institution

Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

13

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

708

Lastpage

710

Abstract

Novel GaAs-AlGaAs heterojunction phototransistors with a /spl delta/-doped base have been fabricated. Very high gain and low output noise have been measured. The measured noise is composed of shot noise associated with collector quiescent bias current and amplified shot noise due to collector leak current for nonpassivated devices. The high gain and low intrinsic noise characteristics of these transistors make them very promising in weak light detection.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical noise; phototransistors; semiconductor device noise; semiconductor doping; shot noise; /spl delta/-doped base; GaAs-AlGaAs heterojunction punch-through phototransistors; amplified shot noise; collector leak current; collector quiescent bias current; low intrinsic noise characteristics; low output noise; noise characteristics; nonpassivated devices; shot noise; very high gain; weak light detection; Circuit noise; Heterojunctions; High speed optical techniques; Noise measurement; Optical noise; P-i-n diodes; Photodetectors; Phototransistors; Stimulated emission; Time factors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.930422

Filename

930422