Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

Author

Wenus, Jakub ; Rutkowski, Jaroslaw ; Rogalski, Antoni

Author_Institution

Inst. of Appl. Phys., Mil. Univ. of Technol., Warsaw, Poland

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

1326

Lastpage

1332

Abstract

In this paper, the performance of P-on-n double-layer heterojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R_oA product is analyzed. Also, the effect of lateral collection of diffusion current and photocurrent on photodiode parameters has been shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p-side doping concentration on photodiode parameters is described briefly

Keywords

II-VI semiconductors; cadmium compounds; doping profiles; energy gap; mercury compounds; p-n heterojunctions; photodiodes; semiconductor device models; 77 K; HgCdTe; P-on-n double-layer heterojunction; backside-illuminated configuration; band-gap energy profiles; composition gradient; diffusion current; double-layer heterojunction photodiodes; lateral collection; p-side doping concentration; photocurrent; photodiode base layer geometry; photodiode parameters; quantum efficiency; two-dimensional analysis; Geometry; Heterojunctions; Infrared detectors; Molecular beam epitaxial growth; Performance analysis; Photoconductivity; Photodiodes; Photonic band gap; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.930647

Filename

930647