• DocumentCode
    1504999
  • Title

    Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes

  • Author

    Yun, Ilgu ; May, Gary S.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    12
  • Issue
    2
  • fYear
    1999
  • fDate
    5/1/1999 12:00:00 AM
  • Firstpage
    238
  • Lastpage
    251
  • Abstract
    GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APD´s) are of interest as an ultra-low noise image capture mechanism for high-definition systems. Since literally millions of these devices must be fabricated for imaging arrays, it is critical to evaluate potential performance variations of individual devices in light of the realities of semiconductor manufacturing. Specifically, even in a defect-free manufacturing environment, random variations in the fabrication process will lead to varying levels of device performance, Accurate device performance prediction requires precise characterization of these variations. This paper presents a systematic methodology for modeling the parametric performance of GaAs MQW APD´s. The approach described requires a model of the probability distribution of each of the relevant process variables, as well as a second model to account for the correlation between this measured process data and device performance metrics. The availability of these models enables the computation of the joint probability density function required for predicting performance using the Jacobian transformation method. The resulting density function can then be numerically integrated to determine parametric yield. Since they have demonstrated the capability of highly accurate function approximation and mapping of complex, nonlinear data sets, neural networks are proposed as the preferred tool for generating the models described above. In applying this methodology to MQW APD´s, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger populations of devices. This approach compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; doping profiles; gallium arsenide; neural nets; quantum well devices; semiconductor device manufacture; semiconductor device models; GaAs-AlGaAs; Jacobian transformation method; Monte Carlo techniques; active diameters; barrier widths; defect-free manufacturing environment; device performance metrics; device yield prediction; doping concentrations; function approximation; high volume manufacturing; high-definition systems; imaging arrays; joint probability density function; multiple quantum well avalanche photodiodes; neural networks; nonlinear data sets; parametric manufacturing yield modeling; probability distribution; process capability; ultra-low noise image capture mechanism; well widths; Avalanche photodiodes; Fabrication; Gallium arsenide; Manufacturing processes; Optical arrays; Quantum well devices; Semiconductor device manufacture; Semiconductor device noise; Virtual manufacturing; Working environment noise;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.762882
  • Filename
    762882