• DocumentCode
    1505612
  • Title

    Modeling of power diodes with the lumped-charge modeling technique

  • Author

    Ma, Cliff L. ; Lauritzen, Peter O. ; Sigg, Jakob

  • Author_Institution
    Analogy Inc., Beaverton, OR, USA
  • Volume
    12
  • Issue
    3
  • fYear
    1997
  • fDate
    5/1/1997 12:00:00 AM
  • Firstpage
    398
  • Lastpage
    405
  • Abstract
    The lumped-charge modeling technique is used to build a simple, physics-based power diode model for circuit simulators. The model consists of simplified, but fundamental semiconductor device equations. The important characteristics of power diodes under static and dynamic conditions are obtained in this compact and efficient model
  • Keywords
    electric charge; power semiconductor diodes; semiconductor device models; circuit simulators; dynamic conditions; fundamental semiconductor device equations; lumped-charge modeling technique; power diodes modelling; semiconductor device characteristics; static conditions; Analytical models; Circuit simulation; Computational efficiency; Parameter extraction; Physics; Poisson equations; Power system modeling; Semiconductor devices; Semiconductor diodes; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.575666
  • Filename
    575666