DocumentCode
1506200
Title
A generalized Dirichlet principle for smoothing small-signal measurements [MESFET]
Author
Snider, Arthur David ; Winson, Peter
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Volume
47
Issue
5
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
636
Lastpage
639
Abstract
We report the theory, implementation, and results of using a Poisson solver to compensate the measured values of drain conductance and transconductance in a nonlinear metal-semiconductor field-effect transistor so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited
Keywords
Poisson equation; Schottky gate field effect transistors; equivalent circuits; finite difference methods; nonlinear estimation; semiconductor device models; I-V curves; Poisson solver; drain conductance; field-effect transistor; generalized Dirichlet principle; large-signal model compatibility; nonlinear MESFET; small-signal measurements smoothing; transconductance; Boundary conditions; Electric potential; Electrostatic measurements; Entropy; FETs; MESFETs; Smoothing methods; Thermodynamics; Transconductance; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.763166
Filename
763166
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