• DocumentCode
    1506676
  • Title

    High quantum efficiency p+-π-n--n+ silicon photodiode

  • Author

    Yin, C.S. ; Hu, D.H.

  • Author_Institution
    Dept. of Phys., Wuhan Univ., Hubei, China
  • Volume
    137
  • Issue
    3
  • fYear
    1990
  • fDate
    6/1/1990 12:00:00 AM
  • Firstpage
    171
  • Lastpage
    173
  • Abstract
    With the aim of seeking the optimal design for photodiode, the authors investigate the p+-π-n- -n+ structure of photodetectors. For this structure, the π type layer is the boron diffused region, and the p+ type active region with a near exponent impurity distribution is formed by diffusing boron through thin silicon dioxide. This is a high quantum efficiency photodiode. Its internal quantum efficiency is near 100%, within the wavelength of light from 900 nm to 350 nm, and as high as 1.13 and 1.41 at the wavelength of 300 nm and 250 nm, respectively
  • Keywords
    boron; diffusion in solids; elemental semiconductors; photodetectors; photodiodes; silicon; π type layer; 100 percent; 250 nm; 300 nm; 350 to 900 nm; B; Si photodiode; SiO2; diffused region; exponent impurity distribution; high quantum efficiency; high quantum efficiency photodiode; internal quantum efficiency; optimal design; p+ type active region; p+-π-n--n+ structure; photodetectors; photodiode design;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    52934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1506676