Effect of i-layer parameters on the performance of Si n+-i-n+ homojunction far-infrared detectors

A unified formalism, including space-charge-limited (SCL) conduction, tunneling, and the multiple-image-force effect, is developed to perform a complete analysis of Si n⁺-i-n⁺ homojunction interfacial workfunction internal photoemission (HIWIP) FIR detectors. It is shown that due to the space-charge effect, the detector performance, such as cutoff wavelength (λ_c), quantum efficiency (η), dark current (I_d), noise equivalent power (NEP), etc., is strongly influenced by the i-layer thickness (W_i ) and compensating acceptor concentration (N_ai) in addition to the emitter layer parameters. As a result, the optimum operating conditions of detectors also depend on W and N_ai. The background limited performance (BLIP) is evaluated, and a critical W _i value is found for BLIP operation