DocumentCode
1508223
Title
PbTiO/sub 3/ films from metalloorganic precursors
Author
Vest, Robert W. ; Xu Jiejie
Author_Institution
Turner Lab., Purdue Univ., West Lafayette, IN, USA
Volume
35
Issue
6
fYear
1988
Firstpage
711
Lastpage
717
Abstract
Ferroelectric PbTiO/sub 3/ films 0.5- to 2.0- mu m thick were prepared by the metalloorganic decomposition (MOD) process using multilayer spinning with firing temperatures of 490-630 degrees C. The temperature dependence of the dielectric constant was found to be a function of the c/a ratio, which could be modified by control of either the single-layer thickness or the strength of the electric field during film preparation near the Curie temperature. The films were near theoretical density and defect-free over 2 cm*2 cm areas.<>
Keywords
ferroelectric thin films; lead compounds; permittivity; 0.5 to 2 micron; 490 to 630 degC; Curie temperature; PbTiO/sub 3/ films; density; dielectric constant; ferroelectric thin films; firing temperatures; metalloorganic decomposition; multilayer spinning; Bismuth; Crystals; Ferroelectric films; Ferroelectric materials; Lead; Piezoelectric films; Radio frequency; Sputtering; Substrates; Temperature;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.9327
Filename
9327
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