Switching characteristics of submicron dimension Permalloy sandwich films

Author

Zhu, T. ; Shi, J. ; Nordquist, K. ; Tehrani, S. ; Durlam, M. ; Chen, E. ; Goronkin, H.

Author_Institution

Phoenix Corp. Res. Lab., Motorola Inc., Phoenix, AZ, USA

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3601

Lastpage

3603

Abstract

Submicron magnetoresistive sandwich cells of various sizes are fabricated and their magnetic properties are studied. A novel coupling mechanism of magnetostatic origin has been found to be mainly responsible for unique switching characteristics in cells with small length to width ratio

Keywords

Permalloy; ferromagnetic materials; magnetic domains; magnetic force microscopy; magnetic hysteresis; magnetic multilayers; magnetic switching; magnetisation; magnetisation reversal; magnetoresistance; magnetoresistive devices; random-access storage; sputtered coatings; NiFeCo-Cu-NiFeCo; coupling mechanism; magnetic layer structure; magnetic properties; magnetoresistive random access memory; magnetostatic origin; small length to width ratio; submicron dimension Permalloy sandwich films; submicron magnetoresistive sandwich cells; switching characteristics; Couplings; Magnetic domains; Magnetic field measurement; Magnetic films; Magnetic force microscopy; Magnetic separation; Magnetic switching; Magnetization; Magnetostatics; Switches;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.619510

Filename

619510