The physics of determining chip reliability

Author

Hess, K. ; Haggag, A. ; McMahon, W. ; Cheng, K. ; Lee, J. ; Lyding, J.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

Volume

17

Issue

3

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

33

Lastpage

38

Abstract

We have indicated the necessity for using statistical models to determine the reliability of deep-submicron MOSFETs. We have presented a methodology by which the reliability can be determined from short-time tests if the defect generation statistics are linked to variations in defect activation energies. We have shown that enhanced latent failures follow from our model for deep-submicron MOSFETs. Therefore, more stringent reliability standards are required, which can be validated by the use of short-time tests. Our model provides the means to calculate these novel reliability demands quantitatively.

Keywords

MOSFET; failure analysis; semiconductor device models; semiconductor device reliability; semiconductor device testing; activation energy; deep-submicron MOSFET; defect generation statistics; latent failure; reliability; short-time test; statistical model; Circuits; Hot carriers; Human computer interaction; Hydrogen; Interface states; MOSFETs; Physics; Stress; Testing; Thermal degradation;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.933789

Filename

933789