Effect of pulse width on dynamic characteristics of high voltage IGBTs

Author

Donlon, John F. ; Motto, Eric R. ; Wiesner, Eugen ; Stumpf, Eugen ; Iura, Shinichi ; Uemura, Hitoshi

Author_Institution

Powerex, Inc., Youngwood, PA, USA

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

2887

Lastpage

2892

Abstract

High Voltage Insulated Gate Bipolar Transistors (HVIGBTs) are used in applications such as traction, medium voltage drives, and power distribution that have high reliability requirements requiring intimate knowledge of HVIGBT performance and limitations at different operation conditions. Transient processes inside the semiconductor device after turn-on require time to reach a stable state. If this stable state is not yet reached before the ensuing turn-off event, the IGBT and Freewheeling diode (FWDi) conduction time influences the switching behavior. This effect is analyzed in this paper. The experimental investigation is done on HVIGBT modules with different blocking voltage ratings. Results are reported normalized to the stable state condition.

Keywords

insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; FWDi conduction time; HVIGBT; blocking voltage rating; freewheeling diode conduction time; high voltage insulated gate bipolar transistor; medium voltage drive; power distribution; pulse width effect; reliability; semiconductor device; traction; transient processing; Insulated gate bipolar transistors; Junctions; Logic gates; Medium voltage; Reliability; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953790

Filename

6953790