• DocumentCode
    1510753
  • Title

    Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices

  • Author

    Simeonov, D. ; Tsai, M.Y. ; Chen, Huan Ting ; Weisbuch, C. ; Speck, J.

  • Author_Institution
    Mater. Dept., Univ. of California, Santa Barbara, CA, USA
  • Volume
    47
  • Issue
    9
  • fYear
    2011
  • Firstpage
    556
  • Lastpage
    558
  • Abstract
    A process for fabrication of flip chip LEDs based on SnO2-GaN wafer bonding is reported. Typical LED characteristics have been measured and no detrimental effect of the bonding interface has been observed. The forward voltage at 20 mA is 3.96 V and differential resistance at 100 mA is as low as 16 Ω.
  • Keywords
    III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; tin compounds; wafer bonding; SnO2-GaN; advanced optoelectronic devices; bonding interface; current 100 mA; current 20 mA; flip chip light emitting diodes; voltage 3.96 V; wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.0514
  • Filename
    5763815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1510753