Delayed Switching in Memristors and Memristive Systems

Author

Wang, Frank Zhigang ; Helian, Na ; Wu, Sining ; Lim, Mian-Guan ; Guo, Yike ; Parker, Michael Andrew

Author_Institution

Cambridge-Cranfield High Performance Comput. Facility, Cranfield Univ. Campus, Cranfield, UK

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

755

Lastpage

757

Abstract

It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge q or flux is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.

Keywords

circuit switching; electric resistance; memristors; circuit-based experiment; delayed switching; electron element; excitation waveform; memristive system; memristor; resistance value; time delay; ultradense computer memory; Electronic device; memristive system; memristor; random access memory; resistively switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2049560

Filename

5482202