Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node

Author

Ou, T.F. ; Tzeng, W.C. ; Tsai, C.H. ; Lee, G.D. ; Ku, S.H. ; Liu, C.H. ; Liu, K.W. ; Zous, N.K. ; Huang, S.W. ; Chen, M.S. ; Lu, W.P. ; Chen, K.C. ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co., Hsinchu, Taiwan

Volume

32

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

734

Lastpage

736

Abstract

A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-ground charge-trap nor array of 45-nm technology. Junction profiles and the location of programmed charges are compared by means of a gate-induced drain leakage scheme. Experiments reveal that the source/drain dosage beneath gate edges affects the program speed, injected charge distribution, X-disturbance induced by secondary impact ionization, and RTN performance.

Keywords

NOR circuits; random-access storage; RTN performance; X-disturbance; channel direction; gate-induced drain leakage scheme; generation node; injected charge distribution; junction dosage; junction profiles; program disturbance; program speed; random telegraph noise; second-bit effect; secondary impact ionization; size 45 nm; source-drain dosage; virtual-ground nonvolatile charge-trap storage NOR-type memory cell; Arrays; Channel hot electron injection; Current measurement; Flash memory; Junctions; Logic gates; Noise; Junction dosage; X-disturbance; program speed; random telegraph noise (RTN); second-bit effect (2nd bit effect); secondary impact ionization;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2134064

Filename

5765422