• DocumentCode
    1512479
  • Title

    High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for \\hbox {n}^{+}/\\hbox {p} Junction Diode

  • Author

    Thareja, G. ; Chopra, S. ; Adams, B. ; Kim, Y. ; Moffatt, S. ; Saraswat, K. ; Nishi, Y.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    32
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    838
  • Lastpage
    840
  • Abstract
    Highly activated n-type dopant is essential for n+/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 1020 cm-3. Well-behaved Sb-doped nv/p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.
  • Keywords
    MOSFET; antimony; diodes; laser beam annealing; p-n junctions; Ge; SIMS; Sb; TEM; diode I-V characteristics; dopant activation; ion implantation; junction diode; laser annealing; n-MOSFET; spreading resistance profiling characterization; Annealing; Germanium; Ion implantation; Junctions; Measurement by laser beam; Resistance; Semiconductor lasers; Activation; antimony; donor; dopant; germanium; junction; n-MOSFET; n-type;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2142410
  • Filename
    5765423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1512479