$Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI

Author

Kim, Joohwa ; Dabag, Hayg ; Asbeck, Peter ; Buckwalter, James F.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California at San Diego, La Jolla, CA, USA

Volume

60

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1870

Lastpage

1877

Abstract

The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push-pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process.

Keywords

CMOS integrated circuits; differential amplifiers; field effect MIMIC; millimetre wave power amplifiers; silicon-on-insulator; CMOS SOI; Q-band power amplifiers; Si; W-band power amplifiers; high-efficiency millimeter-wave power amplifiers; multistage class-AB designs; power-added efficiency; push-pull amplifier; saturated output power; silicon-on-insulator process; size 45 nm; voltage 2 V; Capacitance; Current measurement; Gain; Impedance matching; Logic gates; Power generation; Transmission line measurements; $Q$-band; $W$-band; Millimeter wave (mm wave); mm-wave power amplifier (PA); silicon RF integrated circuit (RFIC); silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2193593

Filename

6197245

-Band and -Band Power Amplifiers in 45-nm CMOS SOI

Kim, Joohwa ; Dabag, Hayg ; Asbeck, Peter ; Buckwalter, James F.

jour

$Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI