DocumentCode
151294
Title
Develop parasitic inductance model for the planar busbar of an IGBT H bridge in a power inverter
Author
Ning Zhang ; Shuo Wang ; Hui Zhao
Author_Institution
Power Electron. & Electr. Power Res. Lab., Univ. of Texas at San Antonio, San Antonio, TX, USA
fYear
2014
fDate
14-18 Sept. 2014
Firstpage
4696
Lastpage
4703
Abstract
This paper first analyzes the current paths on a planar busbar based on IGBT bridge switching states and DC-link capacitor configurations. The busbar´s circuit models which include both self and mutual inductances are developed based on the identified current paths. The inductance circuit models are analyzed and reduced for different switching states, transition states and DC-link capacitor configurations. Inductance and current sharing are analyzed based on circuit theory. Both simulations and experiments are conducted to verify the developed technique.
Keywords
bridge circuits; busbars; capacitor switching; inductance; invertors; power semiconductor switches; DC-link capacitor configurations; IGBT H bridge; IGBT bridge switching states; circuit theory; current sharing analysis; inductance sharing analysis; mutual inductances; parasitic inductance model; planar busbar; power inverter; self inductances; transition states; Bridge circuits; Capacitors; Equivalent circuits; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Switches; DC-link capacitor; IGBT Bridge; Planar busbar; current path; loop inductance; mutual inductance; partial inductance; self-inductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location
Pittsburgh, PA
Type
conf
DOI
10.1109/ECCE.2014.6954044
Filename
6954044
Link To Document