The Punch-Through Effect in Silicon Strip Detectors

Author

Betancourt, C. ; Bielecki, A. ; Butko, Z. ; Deran, A. ; Ely, S. ; Fadeyev, V. ; Parker, C. ; Ptak, N. ; Sadrozinski, H.F.-W. ; Wright, J.

Author_Institution

Phys. Inst., Albert-Ludwigs Univ., Freiburg, Germany

Volume

59

Issue

3

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

671

Lastpage

684

Abstract

In order to protect AC-coupled Silicon strip detectors (SSD) in beam accidents, punch-through protection (PTP) structures are implemented, which are designed to clamp the strip potential to ground when large charges in the bulk break down the electric field. We present a study where we cause the field in the bulk to collapse by illumination with 1064 nm IR pulses, and measure the voltages on the strips as a function of the bias voltage. These voltages are compared with the results of DC I-V measurements, which are commonly used to characterize the effectiveness of the PTP structures, and we find that the PTP structures are only effective at very large currents (several mA), and clamp the strips to much larger voltage than the one derived from DC scans. We also find that the finite resistance of the strip implant compromises the effectiveness of the PTP structures. Radiation damage effects are also presented.

Keywords

radiation effects; silicon radiation detectors; AC-coupled silicon strip detectors; DC I-V measurement; DC scans; IR pulses; PTP structures; beam accidents; bias voltage; bulk electric field breakdown; clamp design; punch-through protection structures; radiation damage effects; strip implant; strip potential; wavelength 1064 nm; Detectors; Implants; Measurement by laser beam; Resistance; Strips; Voltage measurement; High energy physics; punch-through; radiation damage; silicon strip detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2193418

Filename

6197248