Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT

Author

Wen-Chau Liu ; Wen-Lung Chang ; Wen-Shiung Lour ; Shiou-Ying Cheng ; Yung-Hsin Shie ; Jing-Yuh Chen ; Wei-Chou Wang ; Hsi-Jen Pan

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

20

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

274

Lastpage

276

Abstract

We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency f_T and maximum oscillation frequency f_max for a 1-μm gate device are 12 and 28.4 GHz, respectively.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; semiconductor device breakdown; 12 to 28.4 GHz; 300 to 450 K; 40 V; Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As; breakdown voltage; current gain cutoff frequency; double delta-doped GaInP/InGaAs pseudomorphic HEMT; leakage current; maximum oscillation frequency; mesa sidewall effect; temperature dependence; transconductance; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; HEMTs; Indium gallium arsenide; PHEMTs; Temperature; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.767096

Filename

767096