• DocumentCode
    1513938
  • Title

    Microfabrication of high-temperature silicon devices using wafer bonding and deep reactive ion etching

  • Author

    Mehra, Amit ; Ayón, Arturo A. ; Waitz, Ian A. ; Schmidt, Martin A.

  • Author_Institution
    Dept. of Aeronaut. & Astronaut., MIT, Cambridge, MA, USA
  • Volume
    8
  • Issue
    2
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    152
  • Lastpage
    160
  • Abstract
    As part of an effort to develop a micro gas turbine engine capable of providing 10-50 W of electrical power in a package less than one cubic centimeter in volume, we report the fabrication and testing of the first hydrogen combustor micromachined from silicon. Measuring 0.066 cm 3 in volume, and complete with a fuel manifold and set of fuel injector holes, the fabrication of the device was largely enabled by the use of deep reactive ion etching (DRIE) and aligned silicon wafer bonding. The 150-W microcombustor has a power density in excess of 2000 MW/m3 and has been successfully demonstrated to provide turbine inlet temperatures up to 1800 K. After 15 h of experimental tests, the combustor maintained its mechanical integrity and did not exhibit any visible damage. Combined with the results of a materials oxidation study, these tests are used to demonstrate the satisfactory performance of silicon in the harsh oxidizing environment of a combustion chamber
  • Keywords
    combustion; elemental semiconductors; gas turbines; heat engines; high-temperature electronics; micromachining; oxidation; silicon; sputter etching; wafer bonding; 150 W; 1800 K; H2; Si; deep reactive ion etching; fuel injector; fuel manifold; gas turbine; high-temperature silicon device; hydrogen combustor; micro heat engine; microfabrication; micromachining; oxidation; power MEMS; wafer bonding; Engines; Fabrication; Fuels; Hydraulic turbines; Hydrogen; Manifolds; Packaging; Silicon devices; Testing; Volume measurement;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.767111
  • Filename
    767111