• DocumentCode
    1514820
  • Title

    Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes

  • Author

    O´Dowd, J. ; Guo, W.H. ; Lynch, M. ; Flood, E. ; Bradley, A. Louise ; Donegan, J.F.

  • Author_Institution
    Semicond. Photonics Group, Trinity Coll. Dublin, Dublin, Ireland
  • Volume
    46
  • Issue
    12
  • fYear
    2010
  • Firstpage
    854
  • Lastpage
    856
  • Abstract
    A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.
  • Keywords
    absorption; avalanche photodiodes; elemental semiconductors; photon polarisation; silicon; Si; dichroism parameter; polarisation dependence; silicon avalanche photodiodes; two-photon absorption; wavelength 1550 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3090
  • Filename
    5483967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1514820