DocumentCode
1515329
Title
Finite element and Monte Carlo simulation of submicrometer silicon n-MOSFET´s
Author
Hadji, D. ; Maréchal, Y. ; Zimmermann, J.
Author_Institution
Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France
Volume
35
Issue
3
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
1809
Lastpage
1812
Abstract
A three-dimensional hybrid simulator suitable for modeling very small semiconductor devices has been developed in which Monte Carlo and finite element methods are combined. The finite element method is used for solving the Poisson equation, and the Monte Carlo method is used for solving the carrier transport equation. Numerical results performed on a submicron n-channel MOSFET by this approach are reported
Keywords
MOSFET; Monte Carlo methods; Poisson equation; electric fields; elemental semiconductors; finite element analysis; semiconductor device models; silicon; Monte Carlo simulation; Poisson equation; Si; carrier transport equation; electric field; finite element simulation; semiconductor device modelling; submicrometer silicon n-MOSFETs; three-dimensional hybrid simulator; Acoustic scattering; Electrons; Finite element methods; MOSFET circuits; Monte Carlo methods; Optical scattering; Phonons; Poisson equations; Semiconductor devices; Silicon;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.767383
Filename
767383
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