Photon statistics and noise modeling of surface-emitting lasers

Author

LaViolette, Kerry D. ; Liu, Pao-Lo

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA

Volume

3

Issue

2

fYear

1991

Firstpage

110

Lastpage

111

Abstract

Langevin noise-driven rate equations are used to model typical surface-emitting (SE) lasers, producing photon statistics, relative intensity noise (RIN) as a function of frequency, and relaxation oscillation frequency. The differential equations were numerically solved with the computer simulation code written in C and compiled and run on a DEC 3100 workstation. Four minutes of computation time is required to simulate a SE laser biased above threshold at 1-ps step for 1- mu s duration. The results are in good agreement with the published data.<>

Keywords

electron device noise; laser theory; semiconductor device models; semiconductor junction lasers; statistical analysis; 1 mus; Langevin noise-driven rate equations; above threshold biasing; computer simulation code; differential equations; noise modeling; photon statistics; relative intensity noise; relaxation oscillation frequency; surface-emitting lasers; Computational modeling; Equations; Frequency; Laser modes; Laser noise; Optical noise; Semiconductor device noise; Semiconductor lasers; Statistics; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76857

Filename

76857