A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

Author

Kim, Joohwa ; Buckwalter, James F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

Volume

21

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

329

Lastpage

331

Abstract

A low-power cascode distributed amplifier is demonstrated in a 45 nm silicon-on-insulator (SOI) CMOS process. The amplifier achieves a 3 dB bandwidth of 92 GHz. The peak gain is 9 dB with a gain-ripple of less 1.5 dB over the 3 dB bandwidth. The group-delay variation is under ±4.7 ps over the 3 dB bandwidth. The amplifier consumes 73.5 mW from a 1.2 V supply and results in a gain-bandwidth efficiency figure of merit of 3.53 GHz/mW. The chip occupies an area of 0.45 mm² including the pads.

Keywords

CMOS analogue integrated circuits; distributed amplifiers; low-power electronics; silicon-on-insulator; SOI CMOS technology; bandwidth 92 GHz; gain 9 dB; low-power cascode distributed amplifier; power 73.5 mW; silicon-on-insulator; size 45 nm; time -4.7 ps; time 4.7 ps; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Capacitance; Gain; Logic gates; MOS devices; Transmission line measurements; CMOS; distributed amplifier (DA); millimeter-wave integrated circuit; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2139197

Filename

5767522