DocumentCode
1517636
Title
Full-wave modeling of linear FETs for millimeter waves
Author
Farina, Marco ; Rozzi, Tullio
Author_Institution
Dipartimento di Elettronica e Autom., Ancona Univ., Italy
Volume
49
Issue
8
fYear
2001
fDate
8/1/2001 12:00:00 AM
Firstpage
1443
Lastpage
1450
Abstract
Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter and sub-millimeter ranges, is faced with the problem of the distributed nature of the devices. In this paper, we introduce a full-wave approach to the modeling of FETs under the small-signal hypothesis. The method is applied to MESFETs and pseudomorphic high electron-mobility transistors of different topologies and validated by comparison with available experimental data
Keywords
HEMT integrated circuits; MESFET integrated circuits; field effect MIMIC; integrated circuit design; integrated circuit modelling; MESFETs; full-wave modeling; linear FETs; millimeter waves; monolithic-microwave integrated-circuit design; pseudomorphic high electron-mobility transistors; small-signal hypothesis; FETs; Fingers; Frequency; MESFETs; Millimeter wave communication; Millimeter wave devices; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; PHEMTs;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.939925
Filename
939925
Link To Document