• DocumentCode
    1517648
  • Title

    GaAs MESFETs with nonalloyed ohmic contacts: technology and performance

  • Author

    Paccagnella, Alessandro ; Canali, Carlo ; Donzelli, G. ; Zanoni, Enrico ; Wang, L.C. ; Lau, S.S.

  • Author_Institution
    Dipartimento di Ingegneria, Trento Univ.
  • Volume
    24
  • Issue
    11
  • fYear
    1988
  • fDate
    5/26/1988 12:00:00 AM
  • Firstpage
    708
  • Lastpage
    709
  • Abstract
    GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (x.t.l.) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; germanium; ohmic contacts; palladium; semiconductor-metal boundaries; DC characteristics; Ge-Pd-GaAs; III-V semiconductors; MESFETs; PdGe; RF characteristics; annealing; contact resistivity; electrical performances; nonalloyed ohmic contacts; solid phase reaction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1517648