A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

Author

Sebastiano, Fabio ; Breems, Lucien J. ; Makinwa, Kofi A A ; Drago, Salvatore ; Leenaerts, Domine M W ; Nauta, Bram

Author_Institution

NXP Semicond., Eindhoven, Netherlands

Volume

46

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

1544

Lastpage

1552

Abstract

A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 μA from a 1.2-V supply at room temperature.

Keywords

CMOS integrated circuits; compensation; electron mobility; wireless sensor networks; MOS transistor; current 42.6 muA; electron mobility; mobility-based frequency reference; size 65 nm; temperature -55 degC to 125 degC; temperature-compensated CMOS frequency reference; two-point trim; voltage 1.2 V; wireless sensor networks; Accuracy; Frequency conversion; Oscillators; Temperature; Temperature measurement; Temperature sensors; Wireless sensor networks; CMOS integrated circuits; Charge carrier mobility; MOSFET; crystal-less clock; frequency reference; low voltage; sigma-delta modulation; smart sensors; temperature compensation; temperature sensors; ultra-low power; wireless sensor networks;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2011.2143630

Filename

5768040