Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

Author

Matsukawa, T. ; Liu, Yanbing ; O´Uchi, Shin-Ichi ; Endo, Kazuhiko ; Tsukada, Junichi ; Yamauchi, Hiromi ; Ishikawa, Yuki ; Ota, Hiroyuki ; Migita, Shinji ; Morita, Yukinori ; Mizubayashi, Wataru ; Sakamoto, Kunihiro ; Masahara, Meishoku

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

Volume

59

Issue

8

fYear

2012

Firstpage

2003

Lastpage

2010

Abstract

ON-current (I_on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I_on are successfully extracted as independent contributions of threshold voltage V_t, transconductance G_m, and parasitic resistance R_para. As well as V_t variability, G_m variation exhibits a linear relationship in the Pelgrom plot. However, the G_m variation is not reduced with scaling the gate dielectric thickness unlike the V_t variation. Perspective for 14-nm FinFETs represents that the G_m variation will be the dominant I_on variation source. A solution to reduce the G_m variation for the FinFET is also proposed.

Keywords

MOSFET; measurement systems; Pelgrom plot; dominant variation source; fin-shaped FET; gate dielectric thickness; linear relationship; measurement-based analysis; nMOS FinFET; on-current variability decomposition; parasitic resistance; size 14 nm; threshold voltage; transconductance; Correlation; Dielectrics; FinFETs; Fluctuations; Logic gates; Resistance; Statistical distributions; Fin-shaped field-effect transistor (FinFET); mobility; on-current; parasitic resistance; scaling; transconductance; variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2196766

Filename

6202330