Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm

Author

Höhnsdorf, F. ; Koch, J. ; Leu, S. ; Stolz, W. ; Borchert, B. ; Druminski, M.

Author_Institution

Mater. Sci. Centre, Philipps-Univ., Marburg, Germany

Volume

35

Issue

7

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

571

Lastpage

572

Abstract

(GaIn)(NAs)/GaAs single quantum well (SQW) broad area lasers with emission wavelengths at 1.28 and 1.38 μm at room temperature on GaAs substrates have been realised by applying optimised low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs). Record-low threshold current densities of 0.8 and 2.2 kA/cm², together with high differential efficiencies of 0.18 and 0.16 W/A per facet, are obtained for 800 μm long broad area lasers emitting at 1.28 and 1.38 μm, respectively

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; quantum well lasers; vapour phase epitaxial growth; (GaIn)(NAs)/GaAs single quantum well laser; 1,1-dimethylhydrazine; 1.28 to 1.38 micron; GaAs substrate; GaInNAs-GaAs; broad area laser; differential efficiency; low-temperature metal organic vapour phase epitaxy; tertiarybutylarsine; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990421

Filename

769489