Electrothermal-chemical synthesis of nanocrystalline aluminum nitride using a metal vapor pulsed plasma jet

Author

Kim, Jong-Uk ; Ko, Yeonkyu

Author_Institution

Center for Adv. Plasma Surface Technol., Sungkyunkwan Univ., Suwon, South Korea

Volume

29

Issue

4

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

649

Lastpage

652

Abstract

A relatively new process, electrothermal-chemical (ETC) synthesis, is proposed and tested for synthesizing nanocrystalline aluminum nitride (AlN) and aluminum powders. The ETC synthesis employed a plasma gun especially adapted for material synthesis. The plasma gun is powered by high magnitude current pulse (100 kA flowing for 1.2 ms) and produces pulsed, high-velocity metal vapor plasma jets. The pulsed plasma jet is directed into a reaction chamber which is filled with room temperature atmospheric pressure nitrogen (N₂) or helium (He) gas reacting with the metal vapor plasma jet. Transmission electron microscopy and X-ray diffraction have been applied to characterize the synthesized materials and confirmed that the material contained nanocrystalline aluminum (Al) and AlN whose particle size ranging 30-120 nm

Keywords

aluminium compounds; nanostructured materials; nanotechnology; plasma jets; plasma materials processing; powder technology; transmission electron microscopy; 1 atm; 100 kA; 298 K; Al powders; AlN; He; N₂; X-ray diffraction; atmospheric pressure; electrothermal-chemical synthesis; material synthesis; metal vapor pulsed plasma jet; nanocrystalline AlN; plasma gun; pulsed high-velocity metal vapor plasma jets; pulsed plasma jet; reaction chamber; room temperature; transmission electron microscopy; Aluminum nitride; Atmospheric-pressure plasmas; Electrothermal effects; Helium; Nitrogen; Plasma materials processing; Plasma temperature; Plasma x-ray sources; Powders; Testing;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.940960

Filename

940960