Carrier capture and escape processes in In/sub 0.25/Ga/sub 0.75/As-GaAs quantum-well lasers

Author

Romero, B. ; Esquivias, I. ; Weisser, S. ; Larkins, E.C. ; Rosenzweig, J.

Author_Institution

Dept. de Tecnologia, Univ. Politecnica de Madrid, Spain

Volume

11

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

779

Lastpage

781

Abstract

We have extracted the ratio between the carrier capture and escape times, /spl eta/, for In/sub 0.25/Ga/sub 0.75/As-GaAs lasers containing one, two, or three quantum wells, from high-frequency subthreshold impedance measurements at different temperatures. Our results show that the carrier capture process dominates over the diffusion along the confinement region in the overall transport/capture process. The obtained value for /spl eta/ is comparable to unity, and this fact has to be taken into account to obtain real material parameters, such as the carrier lifetime and the radiative recombination coefficient.

Keywords

III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; indium compounds; laser beams; laser variables measurement; quantum well lasers; In/sub 0.25/Ga/sub 0.75/As-GaAs; In/sub 0.25/Ga/sub 0.75/As-GaAs quantum-well lasers; carrier capture; carrier capture process; carrier lifetime; confinement region; diffusion; escape times; high-frequency subthreshold impedance measurements; radiative recombination coefficient; real material parameters; transport/capture process; Bandwidth; Carrier confinement; Charge carrier lifetime; Gallium; Impedance measurement; Optical materials; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.769705

Filename

769705