• DocumentCode
    1520483
  • Title

    Frequency-controlled low-level current source based on charge pumping

  • Author

    Chen, T.P.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    37
  • Issue
    16
  • fYear
    2001
  • fDate
    8/2/2001 12:00:00 AM
  • Firstpage
    1046
  • Lastpage
    1047
  • Abstract
    The use of the charge pumping in MOSFETs as a low-level DC current source is proposed. Such a current source has some superior characteristics: namely, its output current is proportional to the frequency of input pulses; the output is insensitive to the drift of the pulse voltage (i.e. the drift of the pulse base/top levels); and it has an extremely high input resistance
  • Keywords
    MOSFET; MOSFET circuits; constant current sources; interface states; MOSFETs; charge pumping; frequency-controlled low-level current source; high input resistance; input pulse frequency; low-level DC current source; output current; pulse voltage drift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010705
  • Filename
    941824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1520483