• DocumentCode
    1520538
  • Title

    Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM

  • Author

    Shin, Jungho ; Park, Jubong ; Lee, Joonmyoung ; Park, Sangsu ; Kim, Seonghyun ; Lee, Wootae ; Kim, Insung ; Lee, Daeseok ; Hwang, Hyunsang

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • Volume
    32
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    958
  • Lastpage
    960
  • Abstract
    We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiOx/Pt structure. The RRAM device exhibits a large on/off ratio (>; 105), good data retention properties even at 200°C, and stable pulse-switching endurance up to 106 cycles. In comparison with slow switching operation, fast switching operation achieves more uniform program/erase performance in filament-type resistive memory. In order to determine the relationship between the switching speed and the uniformity, we carried out an effective analysis of real pulse operation.
  • Keywords
    random-access storage; data retention property; filament-type RRAM; filament-type resistive memory; program/erase speed; switching uniformity; Electrodes; Resistance; Schottky diodes; Silicon; Switches; RRAM; switching speed; switching uniformity;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2147274
  • Filename
    5771045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1520538