Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications

Author

Hsu, Sheng-Yao ; Chen, Hsiao-Yu ; Chen, Kuan-Neng

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1048

Lastpage

1050

Abstract

A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.

Keywords

copper; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; titanium; 3D bonding technology; 3D integration; Cu-Ti; bond quality; bonding material; cosputtered bonded interconnects; cosputtered metal; diffusion mechanism; electrical performance; fabrication efficiency; high resistance; metal layers; multiple current stressing; self-formed adhesion layer; three-dimensional integration applications; Adhesives; Atomic layer deposition; Copper; Substrates; 3-D integration; Adhesion layer; metal bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2194769

Filename

6203356