Degradation Assessment in IGBT Modules Using Four-Point Probing Approach

Author

Pedersen, Kristian Bonderup ; Kristensen, Peter Kjaer ; Popok, Vladimir ; Pedersen, Kjeld

Author_Institution

Dept. of Phys. & Nanotechnol., Aalborg Univ., Aalborg, Denmark

Volume

30

Issue

5

fYear

2015

fDate

May-15

Firstpage

2405

Lastpage

2412

Abstract

Four-point probing of electrical parameters on various components of IGBT modules is suggested as an approach for the estimation of degradation in stressed devices. By comparison of these parameters for stressed and new components one can evaluate an overall degradation of the module and find out the wear state of individual components. This knowledge can be applied for preventing early failures and for optimization of the device design. The method is presented by regarding a standard type power module subjected to power cycling.

Keywords

insulated gate bipolar transistors; power semiconductor devices; IGBT modules; degradation assessment; degradation estimation; electrical parameters; four-point probing approach; power cycling; standard type power module; Current measurement; Degradation; Insulated gate bipolar transistors; Metallization; Resistance; Semiconductor device measurement; Wires; Four-point probing; interconnections; physics-of-failure; power modules; thermo-mechanical degradation;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2014.2344174

Filename

6872595