PCMO Device With High Switching Stability

Author

Chen, Yiran ; Tian, Wei ; Li, Hai ; Wang, Xiaobin ; Zhu, Wenzhong

Author_Institution

Seagate Technol., Bloomington, MN, USA

Volume

31

Issue

8

fYear

2010

Firstpage

866

Lastpage

868

Abstract

We studied the relationship between the resistive-switching properties of the Pr_0.7Ca_0.3MnO₃ (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5 × 10³ programming cycles.

Keywords

calcium compounds; circuit reliability; manganese compounds; praseodymium compounds; random-access storage; switching circuits; thin film devices; PCMO device; Pr_0.7Ca_0.3MnO₃; device reliability; high switching stability; nonvolatile memory; resistive memory; resistive-switching devices; resistive-switching property; size 30 nm; thin-film elements; voltage -2.5 V; voltage 2.5 V; $hbox{Pr}_{0.7} hbox{Ca}_{0.3}hbox{MnO}_{3}$ (PCMO); Nonvolatile memory; resistive memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2050457

Filename

5491082