• DocumentCode
    1521639
  • Title

    7 W CW power from tensile-strained GaAsyP1-y/AlGaAs (λ=735 nm) QW diode lasers

  • Author

    Knauer, A. ; Erbert, G. ; Wenzel, H. ; Bhattacharya, A. ; Bugge, F. ; Maege, J. ; Pittroff, W. ; Sebastian, J.

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochfrequenztech., Berlin, Germany
  • Volume
    35
  • Issue
    8
  • fYear
    1999
  • fDate
    4/15/1999 12:00:00 AM
  • Firstpage
    638
  • Lastpage
    639
  • Abstract
    100 μm-stripe lasers with a tensile-strained GaAsyP 1-y quantum well embedded in a low-loss AlGaAs large-optical-cavity structure provide a record-high CW power of 7 W at 735 nm from 2 mm-long devices. The transverse beam pattern has a narrow 25° beamwidth. Reliability tests at the 0.5 W CW power level suggest lifetimes >104 h
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; quantum well lasers; 7 W; 735 nm; AlGaAs large optical cavity; CW power; GaAsyP1-y/AlGaAs quantum well diode laser; GaAsP-AlGaAs; lifetime; reliability; stripe laser; tensile strain; transverse beam pattern;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990465
  • Filename
    771003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521639