Continuous-wave operation of a 1.3-μm GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature

Author

Quochi, F. ; Kilper, D.C. ; Cunningham, J.E. ; Dinu, M. ; Shah, J.

Author_Institution

Lucent Technol. Bell Labs., Holmdel, NJ, USA

Volume

13

Issue

9

fYear

2001

Firstpage

921

Lastpage

923

Abstract

We report continuous-wave room temperature operation of a GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser near 1.3 μm. The device is pumped with 674 nm light and provides 1-QmW total optical output at 1280 nm with 40% differential quantum efficiency. We describe the spatial, angular and spectral properties of the laser. This device sets a record for long wavelength with high output power in the GaAsSb-GaAs system.

Keywords

III-V semiconductors; gallium arsenide; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; 1.3 mum; 1280 nm; 674 nm; 674 nm light pumping; GaAsSb-GaAs; GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser; angular properties; continuous-wave room temperature operation; differential quantum efficiency; high output power; spatial properties; spectral properties; total optical output; Optical devices; Optical pumping; Optical recording; Optical surface waves; Pump lasers; Quantum well lasers; Quantum wells; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.942647

Filename

942647