• DocumentCode
    1522603
  • Title

    Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection

  • Author

    Lee, Jian-Hsing ; Huang, Shao-Chang ; Su, Hung-Der ; Chen, Ke-Horng

  • Author_Institution
    Richtek Technol. Corp., Hsinchu, Taiwan
  • Volume
    58
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    1914
  • Lastpage
    1921
  • Abstract
    In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.
  • Keywords
    MOSFET; electrostatic discharge; thyristors; electrostatic-discharge protection; gigahertz high-frequency output ESD protection; semiself-protection scheme; Electrostatic discharge; Layout; MOSFET circuits; Resistors; Stress; Thyristors; Transistors; Electrostatic discharge (ESD); radio frequency; silicon-controlled rectifier (SCR);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2143717
  • Filename
    5771985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1522603