DocumentCode
1522762
Title
Analysis of buried gate MESFET under dark and illumination
Author
Verma, M.K. ; Pal, B.B.
Author_Institution
Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Volume
48
Issue
9
fYear
2001
fDate
9/1/2001 12:00:00 AM
Firstpage
2138
Lastpage
2142
Abstract
D.C. analysis has been carried out for a buried-gate GaAs metal semiconductor field effect transistor (MESFET) under dark and front illumination. The photovoltage I-V characteristics and the transconductance of the device have been evaluated. The results indicate very good performance of the device compared to other devices like MESFET under back illumination and MESFET with front illumination having surface gate. Thus, buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communication and optical computing
Keywords
III-V semiconductors; Schottky gate field effect transistors; buried layers; gallium arsenide; phototransistors; DC analysis; GaAs; GaAs buried gate MESFET; I-V characteristics; front illumination; optical communication; optical computing; optical field effect transistor; photovoltage; transconductance; Absorption; FETs; Gallium arsenide; Lighting; MESFETs; Optical computing; Optical fiber communication; Optical fiber devices; Optical sensors; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.944207
Filename
944207
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