DocumentCode
1522768
Title
A 600-V 10-A trench bipolar junction diode with superior static and dynamic characteristics
Author
You, Budong ; Huang, Alex Q. ; Sin, Johnny K O
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
48
Issue
9
fYear
2001
fDate
9/1/2001 12:00:00 AM
Firstpage
2143
Lastpage
2147
Abstract
In this paper, 600-V, 10-A trench bipolar junction diodes (TBJDs) fabricated utilizing a new self-aligned trench process is characterized and reported. For the first time, the TBJD has experimentally demonstrated, compared to the conventional P-i-N diode, not only superior reverse recovery characteristics, but also lower on-state voltage drops and the unchanged reverse leakage current levels at elevated temperature. The relationship between the diode performance and the design parameters of the TBJD is also discussed in this paper
Keywords
power semiconductor diodes; 10 A; 600 V; design parameters; dynamic characteristics; on-state voltage drop; power electronics; reverse leakage current; reverse recovery; self-aligned trench etching process; static characteristics; trench bipolar junction diode; Anodes; Frequency; Leakage current; P-i-n diodes; Power electronics; Schottky diodes; Semiconductor diodes; Silicon compounds; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.944208
Filename
944208
Link To Document