DocumentCode
1523338
Title
Charge-and-split sense amplifier for multilevel nonvolatile memories
Author
Torelli, G. ; Calligaro, C. ; Manstretta, A. ; Pierin, A. ; Rolandi, P.
Author_Institution
Dipartimento di Elettronica, Pavia Univ., Italy
Volume
35
Issue
10
fYear
1999
fDate
5/13/1999 12:00:00 AM
Firstpage
796
Lastpage
798
Abstract
A low-voltage sense amplifier for multilevel (ML) nonvolatile memories is presented. It consists of a fully-differential current-to-voltage (I-V) converter followed by a differential amplifier. A crosscoupled NMOS pair is included to prevent simultaneous saturation of the two outputs of the I-V converter, thereby relaxing the timing requirements for output data latching. Experimental evaluations of a memory test chip demonstrated the high suitability of the amplifier for ML sensing
Keywords
EPROM; convertors; differential amplifiers; integrated memory circuits; charge-and-split sense amplifier; crosscoupled NMOS pair; differential amplifier; fully-differential current-to-voltage converter; memory test chip; multilevel nonvolatile memories; output data latching; timing requirements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990529
Filename
771424
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