• DocumentCode
    1523584
  • Title

    Low-voltage, high-speed AlSb-InAsSb HEMTs

  • Author

    Boos, J.B. ; Yang, M.J. ; Bennett, B.R. ; Park, D. ; Kruppa, W. ; Bass, R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    35
  • Issue
    10
  • fYear
    1999
  • fDate
    5/13/1999 12:00:00 AM
  • Firstpage
    847
  • Lastpage
    848
  • Abstract
    Antimonide-based HEMTs have been fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5 K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 μm gate length exhibit decreased output conductance and improved voltage gain. At VDS=0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.1 micron; 110 mS/mm; 700 mS/mm; AlSb-InAsSb; IR photoluminescence measurements; InAsSb channel; Sb-based HEMTs; high-speed HEMTs; low-voltage operation; microwave transconductance; output conductance; staggered type I heterojunction lineup; voltage gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990536
  • Filename
    771459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1523584