Modeling MESFETs for intermodulation analysis of mixers and amplifiers

Author

Maas, Stephen A. ; Neilson, David

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

38

Issue

12

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1964

Lastpage

1971

Abstract

The problem of modeling GaAs MESFETs for calculations of intermodulation and spurious responses is examined. It is shown that an adequate model must express not only the absolute I/V characteristics of the device, but also the derivatives of those characteristics. It is demonstrated that these derivatives are dominant in determining intermodulation levels, and that the common approaches to modeling MESFETs do not model those derivatives very well. Finally, a new model for the MESFET gate I/V characteristic (the dominant nonlinearity in most FETs) that is accurate through at least the third derivative is proposed

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; intermodulation; microwave amplifiers; mixers (circuits); semiconductor device models; solid-state microwave circuits; solid-state microwave devices; GaAs; MESFET; amplifiers; gate I/V characteristic; intermodulation analysis; mixers; modeling; spurious responses; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFET circuits; MESFET integrated circuits; Nonlinear equations; Research and development; Transfer functions; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.64581

Filename

64581